Design and analysis of miniaturized substrate integrated waveguide reconfigurable filters for mm-wave applications.

Abstract

Microwave filters are an integral part of communication systems. With the advent of new technologies, microwave devices, such as filters, need to have superior performance in terms of power handling, selectivity, size, insertion loss etc. During the past decade, many applications have been added to the communication networks, resulting in communication systems having to operate at high frequencies in the region of THz to achieve the stringent bandwidth requirements. To achieve the requirements of the modern communication system, tunability and reconfigurability have become fundamental requirements to reduce the footprint of communication devices. However, the communication systems that are more prevalent such as planar circuits have either a large footprint or are not able to handle large amounts of power due to radiation leakage. In this thesis, Substrate Integrated Waveguide (SIW) technology has been employed. The SIW has the same properties as the conventional rectangular waveguide; hence it benefits from the high quality (Q) factor and can handle large powers with small radiation loss. The Half-mode (HMSIW), Quarter-mode (QMSIW), and Eighth-mode (EMSIW) cavity resonators have been designed and used for the miniaturization of the microwave filters. The coupling matrix method was used to implement a filter that uses cross-coupled EMSIW and HMSIW cavity resonators to improve the selectivity of the filter. Balanced circuit techniques have been used to design the circuits that preserve communication systems integrity whereby the Common Mode (CM) signal was suppressed using Deformed Ground Structure (DGS) and a center conductor patch with meandered line. For the designed dual-band filter, the common mode signal was suppressed to -90 dB and - 40 dB for the first and second passband, respectively. The insertion loss observed is 2.8 dB and 1.6 dB for the first and second passband, respectively. For tunability of the filter, a dual-band filter utilizing triangular HMSIW resonators has been designed and reconfigurability is achieved by perturbing the substrate permittivity by dielectric rods. The dielectric rods’ permittivity was changed to achieve tunability in the first instance, and then the rods’ diameter changed in the second instance. For the lowerband, frequency is tunable from 8.1 GHz to 9.15 GHz, while the upper band is tuned from 14.61 GHz to 16.10 GHz. A second order SIW filter with a two layer substrate was then designed to operate in the THz region. For reconfigurability, Graphene was sandwiched between the Silicon Di-Oxide substrate and the top gold plate of the filter, and the chemical potential of Graphene was then varied by applying a dc bias voltage. With a change in dc voltage the chemical potential of Graphene changes accordingly. From the results, a chemical potential change of 0.1 eV to 0.6 eV brings about a frequency change from 1.289 THz to 1.297 THz.